K4B1G0846I-BYNB - 1 Gb 128M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production

Ražotāja daļas numurs
Iekšējās Part Number
Īss apraksts
1 Gb 128M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
RoHS Statuss
Lead bezmaksas / Saderīgs ar RoHS
Piegādes laiks
1-2 dienas
Pieejams daudzums
109765 Pieces
Atsauces cena
USD 0
Mūsu cena
- (Lūdzu, sazinieties ar mums, lai saņemtu labāku cenu: [email protected])

AX Semiconductor ir K4B1G0846I-BYNB noliktavā pārdot.
Piegāde iespējas un piegādes laiks:
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FEDEX: 2-3 days.
UPS: 2-4 days.
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Normal Post: 10-15 days.
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specifikācijas K4B1G0846I-BYNB

kvalitātes garantiju : 365 dienas garantija
Stock Resursu : Franšīzes Izplatītājs / Ražotājs Direct
Izcelsmes valsts : USA / TAIWAN / MEXICO / MALAYSIA / PHI
numurs daļa : K4B1G0846I-BYNB
ražotājs : Samsung Semiconductor
apraksts : 1 Gb 128M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
sērija : DDR3
blīvums : 1 Gb
Org. : 128M x 8
ātrums : 2133 Mbps
spriegums : 1.35 V
Temp. : 0 ~ 85 °C
paka : 78FBGA
Preces statuss : Mass Production
svars : -
stāvoklis : Jauns un oriģināls
Saistītās saites : K4B1G , K4B1G08

dokumenti K4B1G0846I-BYNB

Datu lapas : K4B1G0846I-BYNB.pdf

Saistītie produkti K4B1G0846I-BYNB Samsung Semiconductor

numurs daļa Zīmols apraksts Nopirkt

04026W105KAT2A

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